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Información tecnológica

On-line version ISSN 0718-0764

Abstract

HERNANDEZ, Leobardo; ARZATE, Guillermo; BRITO, Zabdiel  and  RODRIGUEZ, Marco. Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode. Inf. tecnol. [online]. 2010, vol.21, n.5, pp.45-50. ISSN 0718-0764.  http://dx.doi.org/10.4067/S0718-07642010000500007.

This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simúlate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- región of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining aecurate results for application in power electronic.

Keywords : simulation; modelling; PiN diode; silicon carbide.

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